Abstract:
Heterostructures with GaP$_{1-x}$N$_x$ layers synthesized by molecular beam epitaxy on GaP(001) substrates have been studied by photoluminescence and X-ray diffraction measurement. The results are compared to parameters calculated using the band anticrossing (BAC) model. Results of this comparative study lead to the conclusion that the hybridization parameter of GaP$_{1-x}$N$_x$ depends on the molar fraction of nitrogen in the solid solution.