This article is cited in 4 papers

Modeling InAs quantum-dot formation on the side surface of GaAs nanowires

A. D. Bolshakov^ab, V. G. Dubrovskii^ab, Xin Yan^c, Xia Zhang^c, Xiaomin Ren<sup>c

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, China

Abstract: We have theoretically studied the formation of InAs quantum dots (QDs) on the side surface of GaAs nanowires (NWs). The effective energies of formation of a thin InAs layer and QDs on the NW side surface are compared with allowance for elastic stresses at the radial heteroboundary of two materials with lattice mismatch. The concept of a critical thickness of the external (wetting) layer is introduced, at which the mechanical stresses stimulate three-dimensional growth of QDs. The dependence of the critical layer thickness on the NW diameter and elastic constants of the system is determined. The phenomenon of partial filling of the NW side surface by QDs is explained by a decrease in the thickness of a deposited InAs layer with increasing height. The results of modeling agree well with the available experimental data.

Received: 24.04.2013

 English version: Technical Physics Letters, 2013, 39:12, 1047–1052

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