This article is cited in 6 papers

Photoreflectance of GaAs structures with a Mn $\delta$-doped layer

O. S. Komkov^ab, R. V. Dokichev^ab, A. V. Kudrin^ab, Yu. A. Danilov<sup>ab

a</sup> Saint Petersburg Electrotechnical University "LETI"
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The strength of the built-in electric field in gallium-arsenide structures with a $\delta$-doped layer has been determined by photomodulation optical spectroscopy (photoreflectance) for different manganese contents in these structures. The samples under study have been grown by combining metal-organic chemical vapor deposition and laser sputtering of Mn and GaAs targets at a low temperature ($T_g$ = 400$^\circ$C). An increase in the Mn content in the $\delta$-doped layer from zero to 0.35 monolayer leads to an increase in the built-in electric field (averaged over the surface region) from 14 to 25 kV/cm. The data obtained are in good agreement with the results of self-consistent solution of the Schrödinger and Poisson equations for the real (manganese) distribution profile.

Received: 06.06.2013

 English version: Technical Physics Letters, 2013, 39:11, 1008–1011

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