V. V. Ratnikov, A. E. Kalmykov, A. V. Myasoedov, S. A. Kukushkin, A. V. Osipov, L. M. Sorokin, “Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 22,Pages <nobr>25

This article is cited in 6 papers

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

V. V. Ratnikov^ab, A. E. Kalmykov^ab, A. V. Myasoedov^ab, S. A. Kukushkin^ab, A. V. Osipov^ab, L. M. Sorokin^ab

^a Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg

Abstract: X-ray diffraction and transmission electron microscopy techniques have been used to study the dynamics of variation of the structural characteristics and deformation state in SiC, AlN, and GaN epilayers sequentially grown on a Si(111) substrate. In this system, the SiC layer has been grown by solid-phase epitaxy, while the AlN and GaN layers have been deposited by chloride-hydride vapor-phase epitaxy (HVPE) using argon as a carrier gas.

Received: 19.07.2013