This article is cited in 2 papers

Photoinduced degradation of $\alpha$-Si : H/$\mu$c-Si : H

V. M. Emelyanov^ab, A. V. Bobyl'^ab, E. I. Terukov^ab, O. I. Chosta^ab, M. Z. Shvarts<sup>ab

a</sup> Ioffe Institute, St. Petersburg
^b R&D Center TFTE, St.-Petersburg

Abstract: Photoinduced degradation of tandem photoconverters with the structure $\alpha$-Si:H/$\mu$c-Si:H and initial efficiency of 10.5% at temperatures of 298, 328, and 353 K is experimentally studied. It has been found that, at a temperature of 298 K, the efficiency of the photoconverters decreases by 1.0–1.2% during long light exposure, while an increase in temperature to 328 K leads to a decrease in efficiency to 0.2%; at a temperature of 353 K, no degradation is observed. To explain these results, a modified H-collision model was used. Thermal-activation energy has been determined for the process that hampers the growth of dangling (ruptured) bonds in the $i$-$\alpha$-Si:H layer.

Received: 20.05.2013

 English version: Technical Physics Letters, 2013, 39:10, 906–909

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