Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer

Yu. Yu. Illarionov^ab, M. I. Vexler^a, D. Isakov^ab, V. V. Fedorov^a, Yew Kwang Sing<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b Singapore Institute of Manufacturing Technology, 638075 Nanyang Drive 71, Singapore
^c Nanyang Technological University, 639798 Nanyang Drive 50, Singapore

Abstract: A technique for diagnostics of the injection properties of thin dielectric layers based on analysis of the data on silicon electroluminescence in a metal-insulator-semiconductor structure is proposed. The possibility of applying this technique to control the electron injection energy (in particular, when the barrier parameters are poorly known) is demonstrated by the example of samples with CaF$_2$ and HfO$_2$/SiO$_2$. The results obtained are important for application of the insulators under study in microelectronic devices.

Received: 27.05.2013

 English version: Technical Physics Letters, 2013, 39:10, 878–882

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