This article is cited in 1 paper

A high-temperature hydrogen detector with Pt/Pt+/$n$-6H–SiC structure

V. V. Zuev^ab, S. N. Grigor'ev^ab, R. I. Romanov^ab, V. Yu. Fominskiy<sup>ab

a</sup> National Engineering Physics Institute "MEPhI", Moscow
^b Moscow State Technological University "Stankin"

Abstract: A combined method of implantation of Pt+ and subsequent deposition of a Pt film from pulsed-laser plasma was used to form gas-sensitive structures on $n$-6H–SiC monocrystals. High-temperature implantation ensures formation of a layer that improves adhesion of the film to the substrate and varies the current flow parameters due to the effect of atomic hydrogen, which appears during the reaction between H$_2$ and catalytically active Pt. Breakage of the Pt film at elevated detector-operating temperatures ($\sim$500$^\circ$C) has no pronounced negative effect on the sensor properties of the Pt/Pt+/SiC structure. Similar effects in the traditionally used Pt/SiC diode structure lead to severe degradation of its characteristics.

Received: 09.04.2013

 English version: Technical Physics Letters, 2013, 39:9, 834–837

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