This article is cited in 4 papers

Cooled photodiodes based on a type-II single $p$-InAsSbP/$n$-InAs heterostructure

N. D. Il'inskaya^abc, S. A. Karandashov^abc, N. M. Latnikova^abc, A. A. Lavrov^abc, B. A. Matveev^abc, M. A. Remennyi^abc, E. N. Sevostyanov^abc, N. M. Stus<sup>abc

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c JSC National Research Institute "Electron", St. Petersburg

Abstract: Analysis of current-voltage and spectral characteristics of photodiodes based on a single $p$-InAsSbP/$n$-InAs heterostructure formed on a heavily doped $n^+$-InAs substrate ($n^+\sim$ 10$^{18}$ cm$^{-3}$) is presented. It is shown that, at low temperatures (77 $< T <$ 190 K), the generation-recombination current flow mechanism typical of $p$–$i$–$n$ diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.

Received: 27.05.2013

 English version: Technical Physics Letters, 2013, 39:9, 818–821

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