This article is cited in 17 papers

Switching of pulses with a power of 500 MW and subnanosecond rise front based on open discharge

P. A. Bokhan, P. P. Gugin, D. È. Zakrevskii, M. A. Lavrukhin

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The switching characteristics of open discharge in the plane geometry that occurs in a cell with opposed electron beams are studied. Switching time of 400 ps at voltage of 20 kV is obtained in helium. Current amplitude of 28 kA at current rise rate of 3.7 $\times$ 10$^{13}$ A/s is achieved. The mechanism of the transition of the switcher to the high-conductivity state, which is based on photoemission induced by the resonance radiation of fast atoms, is considered.

Received: 12.03.2013

 English version: Technical Physics Letters, 2013, 39:9, 775–778

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