This article is cited in 3 papers

SiC-based nanosized structures with $p$–$n$ junctions for transforming chemical energy into electricity and sensors

V. V. Styrov, S. V. Simchenko

Berdyansk State Pedagogical University

Abstract: The process of chemical-energy transformation into electricity is studied on the surface of a semiconductor structure (SiC-based nanosized $p$–$n$ junctions). The energy transformation occurs due to the interaction of hydrogen and oxygen atoms, as well as mixtures of H + O and CH$_3$ + H with the surface and subsequent separation of the electron-hole pairs by the electric field of the $p$–$n$ junction. The top $p$-layer of a SiC-based structure has a thickness of about 30 nm. It is shown that, in an open circuit, the chemo emf has reached 3 mV and the short circuit chemicurrent 320 nA.

Received: 04.03.2013

 English version: Technical Physics Letters, 2013, 39:7, 621–625

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