This article is cited in 3 papers

A microchannel avalanche photodiode with a fast recovery time of parameters

Z. Sadygov^abcde, Kh. Abdullayev^abcde, N. Anfimov^abcde, R. Madatov^abcde, R. Mukhtarov^abcde, A. Ol'shevskii^abcde, A. I. Titov<sup>abcde

a</sup> Joint Institute for Nuclear Research, Dubna, Moscow region
^b All-Russia Research Institute of Automatics named after N L Dukhov, Moscow
^c Institute of Physics Azerbaijan Academy of Sciences
^d Institute of radiation problems, ANAS
^e Azerbaijan National Academy of Aviation

Abstract: The design and operation principle of a novel microchannel avalanche photodiode with the short recovery time of parameters are considered in this Letter. A distinctive feature of the new device is that at the operating potential on it, the $n^+$ regions (pixels) deeply submerged into the epitaxial layer with $p$-type conductivity are completely depleted; thus, the possibility of accumulation of multiplied charge carriers in them is carried out. This enables attaining the recovery time of pixels in the device of $\sim$50 ns at photocurrent amplification factor equal to 250.

Received: 07.02.2013

 English version: Technical Physics Letters, 2013, 39:6, 498–500

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