This article is cited in 5 papers

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

S. A. Kukushkin^ab, A. V. Osipov^ab, D. B. Vcherashnii^ab, S. A. Obukhov^ab, N. A. Feoktistov<sup>ab

a</sup> Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: The first results of studying the electrical properties of thin silicon carbide (SiC) layers grown on silicon using a new method of solid-phase epitaxy are presented. The type of carriers in these SiC/Si films is determined, and their concentration and mobility are measured. SiC films grown by the proposed method on Si substrates possess n-type conductivity. The concentration of majority carriers (electrons) in undoped SiC layers amounts on average to $n\sim$ 10$^{18}$ cm$^{-3}$, and their mobility varies within $\mu$ = 27–85 cm$^2$/(V s), depending on the regime of synthesis.

Received: 16.10.2012

 English version: Technical Physics Letters, 2013, 39:5, 488–491

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