V. I. Vasil’ev, G. S. Gagis, V. I. Kuchinskii, V. P. Khvostikov, E. P. Marukhina, “Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 10,Pages <nobr>49

This article is cited in 3 papers

Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions

V. I. Vasil’ev, G. S. Gagis, V. I. Kuchinskii, V. P. Khvostikov, E. P. Marukhina

Ioffe Institute, St. Petersburg

Abstract: A new method based on solid-state substitution reactions is proposed for obtaining nanodimensional layers of GaAsP solid solutions on the surface of GaAs semiconductor crystals. The processed GaAs wafers exhibit a wide-bandgap optical window effect, whereby their room-temperature photoluminescence intensity increases by a factor of up to 25.

Received: 24.01.2013