This article is cited in 2 papers

Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

V. N. Bessolov^abc, E. V. Konenkova^abc, S. A. Kukushkin^abc, V. I. Nikolaev^abc, A. V. Osipov^abc, Sh. Sharofidinov^abc, M. P. Scheglov<sup>abc

a</sup> Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^c Perfect Crystals LLC, Saint-Petersburg

Abstract: The idea of a new method for growing gallium nitride (GaN) epilayers in semi-polar direction by hydride-chloride vapor-phase epitaxy (HVPE) is disclosed. We propose to use Si(210) substrates with the first buffer layer of silicon carbide (3C-SiC) and the second buffer layer of aluminum nitride (AlN). It is experimentally demonstrated for the first time that, under conditions of anisotropic deformation in the GaN/AlN/3C-SiC/Si(210) structure, a GaN epilayer exhibits growth in semi-polar directions.

Received: 09.10.2012

 English version: Technical Physics Letters, 2013, 39:3, 274–276

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