This article is cited in 1 paper

Determining the parameters of helium accumulation centers in irradiated silicon carbide from thermodesorption spectra

V. V. Svetukhin^ab, A. S. Kadochkin^ab, V. D. Risovany<sup>ab

a</sup> Ulyanovsk State University
^b Scientific-Research Institute of Atomic Reactors, Dimitrovgrad

Abstract: A model of helium thermodesorption from irradiated silicon carbide is proposed. The yield of helium from this material in the course of thermal annealing is quantitatively estimated. The energy parameters of the defect structure of silicon carbide are determined.

Received: 18.07.2012

 English version: Technical Physics Letters, 2013, 39:2, 226–228

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