M. S. Dunaevskii, P. A. Alekseev, M. I. Lepsa, D. Gruetzmacher, A. N. Titkov, “Charge accumulation on the surface of GaAs nanowires near the Schottky contact”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 4,Pages <nobr>53

This article is cited in 2 papers

Charge accumulation on the surface of GaAs nanowires near the Schottky contact

M. S. Dunaevskii^ab, P. A. Alekseev^ab, M. I. Lepsa^cd, D. Gruetzmacher^cd, A. N. Titkov^ab

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c Peter Grünberg Institute, Jülich
^d JARA-Fundamentals of Future Information Technology, Forschungszentrum Julich, Germany

Abstract: The distribution of external potential along GaAs nanowires with electric contacts formed at the ends has been studied by the method of Kelvin probe force gradient microscopy (KPFGM). It is established that, in the case of Schottky contact formation, the application of external blocking voltage leads to charge accumulation in the surface layer of natural oxide near the contact, which significantly modifies the potential profile along the GaAs nanowire. The accumulation of charge and its dissipation upon removal of the blocking voltage proceed with characteristic times on the order of several minutes.

Received: 07.10.2012