Light-emitting diodes based on GaInAsSb solid solutions for the spectral range of 2.5–2.8 $\mu$m

Ya. A. Parkhomenko, È. V. Ivanov, E. V. Kunitsyna, A. A. Pivovarova, A. V. Nashchekin, I. A. Andreev, N. D. Il'inskaya, Yu. P. Yakovlev

Ioffe Institute, St. Petersburg

Abstract: For the first time LEDs emitting in the wavelength range of 2.5–2.8 $\mu$m at room temperature were created on the base of $n$-GaSb/$n$-Ga$_{0.74}$In$_{0.26}$As$_{0.22}$Sb$_{0.78}$/$p$-GaSb heterostructures grown by liquid-phase epitaxy using lead as a neutral solvent. The results of the study of electrical and electroluminescent characteristics for these LEDs are presented. In quasi-CW mode at the injection current of 200 mA the pulse optical power was equal to 7.4 $\mu$W. The developed LEDs are able to be used for detection of carbon dioxide and water vapor in the atmosphere.

Keywords: light-emitting diodes, electroluminescence, GaSb/GaInAsSb heterostructures, liquid-phase epitaxy, lead-containing melt solutions.

Received: 27.06.2025
Revised: 01.08.2025
Accepted: 02.08.2025

DOI: 10.61011/PJTF.2025.21.61525.20419

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