The bottom of a dimensional subband in a superlattice with strongly coupled shallow quantum wells

A. B. Pashkovskii

Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.

Abstract: Based on the analytical solution of the dispersion equation, the energy position of the bottom of the dimensional subband in shallow superlattices is estimated. It is shown that for the upper valleys of GaAs/AlAs superlattices used in heterostructures of field-effect transistors, the depth of the bottom of the dimensional subband relative to the top of the barrier is at the level of 0.11 – 0.13 eV.

Keywords: superlattice, dimensional subbands, potential barrier.

Received: 20.06.2025
Revised: 16.07.2025
Accepted: 25.07.2025

DOI: 10.61011/PJTF.2025.21.61522.20411

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