This article is cited in 3 papers

Synthesis of aluminum nitride nanolayers

L. A. Akashev^ab, N. A. Popov^ab, V. A. Kochedykov^ab, V. G. Shevchenko<sup>ab

a</sup> Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
^b Institute of High-Temperature Electrochemistry, RAS, Ekaterinburg

Abstract: The interaction between the surface of polycrystalline aluminum and nitrogen at a slow heating to a temperature of 623$^\circ$C and a pressure of 1.25 atm is studied by ellipsometry. It is shown that the formation of a continuous nanolayer of aluminum nitride occurs in a temperature range of 520–580$^\circ$C and above. The maximum thickness of the synthesized aluminum nitride nanolayer is 32 nm. The formation of nitride on the surface of aluminum is confirmed by IR spectroscopy of powders with a specific surface area of 6.4 m$^2$/g.

Received: 03.09.2012

 English version: Technical Physics Letters, 2013, 39:2, 154–156

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