N. I. Anisimova, V. A. Bordovskii, G. I. Grabko, R. A. Castro, “Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 2,Pages 1

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Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers

N. I. Anisimova, V. A. Bordovskii, G. I. Grabko, R. A. Castro

Herzen State Pedagogical University of Russia, St. Petersburg

Abstract: The photodielectric effect (PDE) in amorphous arsenic triselenide (As$_2$Se$_3$) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum.

Received: 08.06.2012