D. A. Usanov, S. S. Gorbatov, V. Yu. Kvasko, A. V. Fadeev, A. A. Kalyamin, “Spatial oscillations of the electric field and the charge density in a silicon $p$–$i$–$n$ diode”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 21,Pages 104

This article is cited in 2 papers

Spatial oscillations of the electric field and the charge density in a silicon $p$–$i$–$n$ diode

D. A. Usanov, S. S. Gorbatov, V. Yu. Kvasko, A. V. Fadeev, A. A. Kalyamin

Saratov State University

Abstract: The distributions of the electrical field and the charge density in a $p$–$i$–$n$ diode under forward bias were calculated numerically and studied experimentally with the use of a near-field microwave microscope. The crucial importance of including the dependence of the carrier diffusion coefficient on the electric field into the description of processes taking place in $p$–$i$–$n$ diodes was demonstrated. The numerical results agree qualitatively with the experimental ones.

Received: 16.06.2014