This article is cited in 16 papers

The magnetoelectric effect in structures based on metallized gallium arsenide substrates

V. M. Laletin^ab, A. I. Stognij^ab, N. N. Novitskii^ab, N. N. Poddubnaya<sup>ab

a</sup> Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk
^b Scientific-Practical Materials Research Centre of NAS of Belarus

Abstract: The magnetoelectric effect in the electromechanical resonance region is studied experimentally for the first time in structures in the form of gallium arsenide substrates with their two sides metallized with thin nickel or cobalt films and gold films (Ni–GaAs–Au and Co–GaAs–Au). The dependence of the magnetoelectric effect on the magnetization field in a Ni–GaAs–Au structure has an anomalous shape that is uncharacteristic of known composite magnetoelectric materials based on ceramic piezoelectrics. The maximum magnetoelectric coefficient under resonance is 81.2 V/A. This corresponds to the giant magnetoelectric effect at room temperature. It is shown that this resonance is characterized by a high Q-factor of up to 8000.

Received: 26.06.2014

 English version: Technical Physics Letters, 2014, 40:11, 969–971

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