$\beta$-Radiation-induced decrease of adhesion in AlN/Si structure

Yu.I. Golovin, A. A. Dmitrievskii, N. Yu. Efremova

Research Institute "Nanotechnology and Nanomaterials", Tambov State University

Abstract: We have studied the effect of low-intensity ($I\sim$ 1.2 $\times$ 10$^5$cm$^{-2}$ $\cdot$ s$^{-1}$) $\beta$ radiation on the exfoliation of thin amorphous AlN films (with thicknesses on the order of 100 nm) from (100)-oriented silicon substrate as a result of scratching with a Berkovich pyramid at a linearly increasing load. It is established that AlN film beta-irradiated to a fluence of $f$ = 2.16 $\times$ 10$^{10}$ cm$^{-2}$ exfoliates at about 10% lower load, while the lateral force acting upon the indenter decreases by about 40%. The obtained results can be used for improving the bonding technology and must be taken into account in assessment of the reliability of thin-film structures subjected to (intentional or accidental) electron irradiation.

Received: 06.06.2014

 English version: Technical Physics Letters, 2014, 40:10, 887–889

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