This article is cited in 1 paper

Modification of the chemical composition, morphology, and antireflection properties of WSe$_x$ films formed by pulsed laser deposition

S. N. Grigor'ev^abc, V. N. Nevolin^abc, V. Yu. Fominskiy^abc, R. I. Romanov^abc, M. A. Volosova<sup>abc

a</sup> Moscow Institute "Stankin"
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^c National Engineering Physics Institute "MEPhI", Moscow

Abstract: We have studied the possibility of controlling important structural characteristics of WSe$_x$ films, which belong to the class of layered materials and have good prospects for application in modern nano- and optoelectronic devices. It is established that, by using thermal treatment and ion irradiation during pulsed laser deposition (PLD) in the shadow of an antidroplet shield, it is possible to vary the Se/W atomic ratio from 5 to 1.5, change the character of atomic packing, and obtain films with either smooth or rough surfaces. An increase in the height of parabolic protrusions on the surface up to 200–500 nm leads to a decrease in the optical reflection coefficient in a broad wavelength range from 30% (typical of smooth films) to 6%, which can favor a significant increase in the efficiency of solar cells based on semiconductor films of this type.

Received: 28.04.2014

 English version: Technical Physics Letters, 2014, 40:9, 793–796

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