This article is cited in 5 papers

Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted $p^+$–$n$ photodiode structure formation

K. J. Mynbaev^abc, N. L. Bazhenov^abc, M. V. Yakushev^abc, D. V. Marin^abc, V. S. Varavin^abc, Yu. G. Sidorov^abc, S. A. Dvoretskii<sup>abc

a</sup> Ioffe Institute, St. Petersburg
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Tomsk State University

Abstract: The impurity-defect structure of heteroepitaxial Cd$_x$Hg$_{1-x}$Te/Si (0.35 $< x <$ 0.39) layers grown by molecular beam epitaxy for the creation of arsenic-ion-implanted $p^+$–$n$ junctions has been studied by the photoluminescence method. It is established that full realization of the possibilities of $p^+$–on–$n$ photodiode structures based on the CdHgTe/Si system is hindered by uncontrolled doping of the material that leads to the formation of both shallow (impurity level energy $\sim$10 meV) and deep ($\sim$ 50 meV) acceptor levels.

Received: 05.03.2014

 English version: Technical Physics Letters, 2014, 40:8, 708–711

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