A. A. Lebedev, V. V. Kozlovsky, “Irradiation of sublimation-grown <nobr>$p$</nobr>-SiC with 0.9-MeV electrons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 15,Pages <nobr>45

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Irradiation of sublimation-grown $p$-SiC with 0.9-MeV electrons

A. A. Lebedev^ab, V. V. Kozlovsky^ab

^a Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Carrier removal rate $V_d$ has been determined in three sublimation-grown $p$-type SiC polytypes under irradiation with 0.9-MeV electrons. Known published data are used to compare the values of $V_d$ in silicon carbide at room temperature in relation to the polytype, conductivity type, and fabrication technology. A model that accounts for the difference between the values of $V_d$ is suggested.

Received: 17.02.2014