This article is cited in 6 papers

Epitaxy of Pb(Zr,Ti)O$_3$ films on Ir/YSZ/Si under conditions of cathode sputtering: The effect of reactive gas composition

V. G. Beshenkov, A. A. Burlakov, A. G. Znamenskii, V. A. Marchenko

Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: The peculiarities of the growth of PZT films on heteroepitaxial Ir/YSZ/Si structures under conditions of cathode radio-frequency sputtering of a ceramic target in argon-oxygen mixtures have been studied. It is shown that sputtering in a gas mixture with a high partial pressure of oxygen results in crystallization of the PZT films in a metastable pyrochlore structure, while sputtering in argon or the use of argon in the initial phase of the sputtering yields PZT films with an equilibrium perovskite structure.

Received: 13.03.2014

 English version: Technical Physics Letters, 2014, 40:8, 644–647

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