This article is cited in 3 papers

Evolution of morphology of surface during film growth of polycrystalline silicon with hemispherical grains

A. V. Novak^ab, V. R. Novak<sup>ab

a</sup> National Research University of Electronic Technology
^b State Research Institute of Physical Problems

Abstract: Evolution of surface morphology during film growth of polycrystalline silicon with hemispherical grains (HSG-Si films) is studied using scaling analysis of surface images obtained by atomic-force microscopy. It has been found from the height-height correlation functions that roughness exponent $\alpha$ = 0.92 $\pm$ 0.03 and does not depend on the thickness of a film. The dependences of interface width $w(t)$, correlation length $\xi(t)$ and wavelength $\lambda(t)$ on deposition time, as well as the scaling coefficients $\beta$, $1/z$, and $p$, are found.

Received: 27.12.2013

 English version: Technical Physics Letters, 2014, 40:7, 549–552

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