This article is cited in 1 paper

A magnetic-field bending resonance sensor with maximum generated magnetoelectric voltage

G. S. Radchenko^abc, M. G. Radchenko<sup>abc

a</sup> Southern Federal University, Rostov-on-Don
^b Research Institute of Physics, Southern Federal University
^c Moscow State Technical University of Civil Aviation, Rostov Branch

Abstract: A bending resonance magnetoelectric (ME) sensor with maximum generated response voltage is theoretically described. Based on the proposed model, the frequency dependence of the ME coefficient is determined. The optimum thickness of a piezoceramic layer is proposed, which provides a twofold increase in the response voltage. The phenomenon of antiresonance suppression of oscillations in the region of the third bending resonance at 95 Hz is discovered.

Received: 31.01.2014

 English version: Technical Physics Letters, 2014, 40:6, 503–505

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