I. O. Mayboroda, A. A. Andreev, P. A. Perminov, Yu. V. Fedorov, M. L. Zanaveskin, “Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 11,Pages <nobr>80

This article is cited in 7 papers

Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions

I. O. Mayboroda^ab, A. A. Andreev^ab, P. A. Perminov^ab, Yu. V. Fedorov^ab, M. L. Zanaveskin^ab

^a National Research Centre "Kurchatov Institute", Moscow
^b V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow

Abstract: Specific features of how nonalloyed ohmic contacts to the 2D conducting channel of high-electron-mobility transistors based on AlGaN/(AlN)/GaN heterostructures are fabricated via deposition of heavily doped $n^+$-GaN through a SiO$_2$ mask by ammonia molecular-beam epitaxy have been studied. The technique developed makes it possible to obtain specific resistances of contacts to the 2D gas as low as 0.11 $\Omega$ mm on various types of Ga-face nitride heterostructures, which are several times lower than the resistance of conventional alloyed ohmic contacts.

Received: 27.12.2013