A. A. Koryakin, N. V. Sibirev, V. G. Dubrovskii, “The initial stage of growth of self-induced GaN nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 11,Pages <nobr>45

This article is cited in 4 papers

The initial stage of growth of self-induced GaN nanowires

A. A. Koryakin^ab, N. V. Sibirev^ab, V. G. Dubrovskii^ab

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: The initial growth stage of self-induced GaN nanowires (NWs) on an AlN(0001)/Si(111) substrate is studied theoretically. Calculations are carried out within the model of Stranski–Krastanov quantum dot formation. The surface density of GaN islands is calculated, the formation of which precedes NW formation. GaN NW density is found as a function of gallium flux and deposition time for the case of molecular beam epitaxy growth.

Received: 05.02.2014