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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014 Volume 40, Issue 9, Pages 17–23 (Mi pjtf8141)

This article is cited in 5 papers

Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer

M. M. Rozhavskaya, V. V. Lundin, E. Yu. Lundina, A. V. Sakharov, S. I. Troshkov, A. N. Smirnov, V. Yu. Davydov

Ioffe Institute, St. Petersburg

Abstract: The possibilities of a new method of growing gallium nitride nano- and microwire crystals using continuous titanium films with a thickness of 10–30 nm during growth are described. It is shown that this method can provide growth of high-quality GaN nanowire crystals at an extremely high rate of about 10 $\mu$m/min.

Received: 08.11.2013


 English version:
Technical Physics Letters, 2014, 40:5, 372–374

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