This article is cited in 4 papers

Electrical properties of anisotype $n$-TiN/$p$-Hg$_3$In$_2$Te$_6$ heterojunctions

M. N. Solovan, E. V. Maistruk, V. V. Brus, P. D. Mar'yanchuk

Chernivtsi National University named after Yuriy Fedkovych

Abstract: Photosensitive anisotype $n$-TiN/$p$-Hg$_3$In$_2$Te$_6$ heterojunctions have been obtained by reactive magnetron sputtering of thin $n$-type titanium nitride (TiN) films onto single-crystalline plates of $p$-type Hg$_3$In$_2$Te$_6$. It is established that the obtained heterostructures generate an open-circuit voltage of $V_{oc}$ = 0.52 V and a short-circuit current density of $I_{sc}$ = 0.265 mA/cm$^2$ with a filling factor of $FF$ = 0.39 under illumination at a power density of 80 mW/cm$^2$.

Received: 03.10.2013

 English version: Technical Physics Letters, 2014, 40:3, 231–233

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