Formation of a crystallization courtyard in eutectic systems and crystal growth

V. N. Gurin, V. N. Osipov, L. I. Derkachenko, B. N. Korchunov, T. B. Popova

Ioffe Institute, St. Petersburg

Abstract: The so-called crystallization courtyard is investigated that forms in processes of mass crystallization around the Ge and Si crystals and their solid solutions (Ge+Si) during cooling of hypereutectic alloys in the Ge–Al, Si–Al, and (Ge+Si)-Al eutectic systems. For the first time, data on the composition and microhardness of this crystallization courtyard are given and its role is shown as a stopper of cracking in an Al–(Ge,Si) system during rapid cooling after the heating system is turned off. For the first time, it is suggested that a crystallization courtyard forms in all hypereutectic systems (including every system in which the amount of the taken solvent does not correspond to the eutectic point).

Received: 12.07.2013

 English version: Technical Physics Letters, 2014, 40:3, 199–202

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