Abstract:
The phase transition from a diamond-like crystalline lattice of the Si-I phase to the $\beta$-tin type structure of the Si-II phase has been studied by measuring electric resistance under an indenter incorporated into a narrow ($d\approx$ 2 $\mu$m) crevice between metal contacts. It was established that the relative volume fraction of the metalized Si-II phase formed during indentation decreases under the action of a low dose (fluence $F$ = 3.24 $\times$ 10$^{10}$ cm$^{-2}$) of low-intensity ($I$ = 1.8 $\times$ 10$^5$ cm$^{-2}$ s$^{-1}$) beta radiation.
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