M. M. Rozhavskaya, V. V. Lundin, A. V. Sakharov, “Synthesis of an LED structure on the $(11\bar20)$ and $(0001)$ faces of mesa stripes grown by selective-area epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 1,Pages 37

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Synthesis of an LED structure on the $(11\bar20)$ and $(0001)$ faces of mesa stripes grown by selective-area epitaxy

M. M. Rozhavskaya, V. V. Lundin, A. V. Sakharov

Ioffe Institute, St. Petersburg

Abstract: The influence of the carrier-gas type on the character of formation of $p$-GaN layers on the faces (0001), $(11\bar20)$, and $(11\bar22)$ of a mesa-stripe structure, formed by the selective-area epitaxy method. A light-emission diode having a rectangular cross section with an active region made of InGaN/GaN quantum wells was formed on the $(0001)$ and $(11\bar20)$ faces of the mesa stripe structure. LED prototypes on free GaN stripes detached from the substrate were created.

Received: 26.08.2013