Formation of a diffraction grating based on nanoporous germanium by implantation of bismuth ions

A. L. Stepanov, A. M. Rogov, V. F. Sotnikova, V. F. Valeev, V. I. Nuzhdin, D. A. Konovalov

Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences

Abstract: A diffraction grating was formed on the basis of nanoporous Ge (PGe) layer by irradiating a single-crystal $c$-Ge (Bi:PGe) substrate with $^{209}$Bi$^{++}$ ions through a copper mesh mask with a cell size of 40 $\mu$m at an energy of $E$ = 72 keV, a current density of $J$ = 5 $\mu$A/cm$^2$ and a dose of $D$ = 6.2 $\cdot$ 10$^{15}$ ion/cm$^2$. During ion implantation, swelling of the Bi:PGe layer occurs in unmasked areas of the irradiated $c$-Ge. Formation of periodic Bi:PGe microstructures on the $c$-Ge surface was controlled by optical, electron and probe microscopy. The efficiency of the diffraction grating was shown by probing it with helium-neon laser radiation.

Keywords: nanoporous germanium, ion implantation, diffraction grating.

Received: 24.04.2025
Revised: 24.04.2025
Accepted: 23.06.2025

DOI: 10.61011/PJTF.2025.17.60975.20357

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