Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025 Volume 51, Issue 17,Pages 22–24(Mi pjtf8006)
Estimation of an electron momentum parallel to the boundary of the heterojunction effect on the height of the bottom of the first subband in transistor superlattices with thin high barriers
Abstract:
For transistor heterostructures, based on the analytical solution of the dispersion equation describing the allowed states in superlattices with thin, high barriers, the effect of an electron momentum parallel to the boundary of the heterojunction on the height of the dimensional subband bottom in such superlattices was carried out and, accordingly, their effectiveness when positioned along the edges of the channel was estimated. It is shown that such sets of barriers prevent the transition from a narrow-band transistor channel to a wide-band material limiting the channel, at least until intensive transitions to the upper valleys of the semiconductor begin in the channel itself.
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