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JOURNALS // Pisma v Zhurnal Tekhnicheskoi Fiziki // Archive
Pisma v Zhurnal Tekhnicheskoi Fiziki, 1985 Volume 11, Issue 5, Pages 286–290 (Mi pjtf800)
Accelerating stress effect on kinetics of ion-implanted silicon layer crystallization during pulse heating

L. N. Aleksandrov

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk

Received: 30.11.1984



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