Abstract:
Theoretical estimations are made for the resonant behavior of Auger recombination processes in heterostructures with Hg(Cd)Te/CdHgTe quantum wells designed for middle infrared range. Detailed calculations of the localized and delocalized (above-barrier) hole states are carried out in Hg(Cd)Te/CdHgTe quantum wells. The most probable mechanism of the resonant Auger recombination is established. Optimized structure designs are suggested to suppress the resonant non-radiative recombination processes.