Nanoscale barium-strontium titanate films for microelectronics devices

V. M. Mukhortov, S. V. Birukov, Yu. I. Golovko, S. I. Masychev

Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don

Abstract: The temperature dependence of permittivity and leakage currents of nanoscale thin films of barium-strontium titanate are investigated. The studies were carried out with a bias voltage applied to the gap between the pins of an interdigital capacitor based on the specified film. High temperature stability of nanoscale thin films of barium-strontium titanate with bias voltage applied is established. It is shown that leakage currents are nonlinear and asymmetrical relative to the applied bias voltage, and their value allows using the studied films in the implementation of microelectronic devices.

Keywords: nanoscale, ferroelectric film, planar capacitor, barium-strontium titanate.

Received: 08.04.2025
Revised: 18.05.2025
Accepted: 19.05.2025

DOI: 10.61011/PJTF.2025.16.60926.20338

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