Analytical models of depletion-layer capacitance of $p$–$n$-junction in high-voltage of mesaepitaxial semiconductors structures

A. I. Suraikin, N. N. Bespalov, A. A. Suraikin

Ogarev Mordovia State University, Saransk

Abstract: The article describes the results of researching and calculation of total depletion-layer capacitance of high-voltage, mesaepitaxial diodes. It is shown how influences of peripheral of “mesa”-region for magnitude of total depletion-layer capacitance of $p$–$n$-junction in mesaepitaxial diodes struc-tures it. Proposed of the analytical model of total depletion-layer capacitance of high-voltage, mesaepitaxial diodes structures, taking into account of the capacitance of peripheral of “mesa”-region. The relations obtained of self-consistent of the analytical equations for the depletion-layer capacitance of “mesa”-region for two options: for inclination angle constant of “mesa”-chamfer; for variable angle inclination of “mesa”-chamfer.

Keywords: mesaepitaxial diode, “mesa”-region, “mesa”-chamfer, depletion-layer capacitance, capacitance-voltage characteristic.

Received: 20.03.2025
Revised: 18.04.2025
Accepted: 30.04.2025

DOI: 10.61011/PJTF.2025.15.60803.20320

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