Growth of germanium-rich Ge$_{1-x}$Si$_x$ solid solutions

S. I. Supelnyak, E. B. Baskakov, E. N. Korobeynikova, V. G. Kosushkin, V. I. Strelov

Kurchatov Complex Crystallography and Photonics, NRC "Kurchatov Institute", Moscow

Abstract: A solid solution Ge$_{1-x}$Si$_x$ with a calculated Si concentration of 0.6 at.% was obtained by vertical directional crystallization. The distribution of Si along the crystal growth axis and in several cross sections was studied. The results of the studies confirm the formation of a solid solution. The nature of the change in the silicon content is consistent with the concepts of the crystallization process of a solid solution with a silicon distribution coefficient in germanium ($k_{\mathrm{Si}}>$ 1).

Keywords: solid solution, germanium, silicon, directional crystallization.

Received: 05.03.2025
Revised: 11.04.2025
Accepted: 11.04.2025

DOI: 10.61011/PJTF.2025.14.60761.20308

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