Abstract:
The chemical vapor deposition process of aluminum oxide thin films using aluminum isopropoxide as a precursor was investigated. Deposition parameters enabling a high growth rate of up to $\sim$ 0.94 $\mu$m/min were identified. The resulting coatings were found to have an amorphous structure, with subsequent annealing at 1200$^\circ$C inducing crystallization and the formation of $\alpha$-Al$_2$O$_3$, $\kappa$-Al$_2$O$_3$, and $\gamma$-Al$_2$O$_3$ phases. It was demonstrated that aluminum isopropoxide allows the synthesis of high-purity coatings at relatively low deposition temperatures.
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