Tandem GaInP/Ga(In)As structures for triple-junction hybrid GaInP/Ga(In)As//Si solar cells

S. A. Mintairov^a, V. M. Emelyanov^a, N. A. Kalyuzhnyy^a, M. V. Nakhimovich^a, V. V. Oleinik^b, R. A. Salii^a, A. F. Skachkov^b, L. N. Skachkova^b, M. Z. Shvarts<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Saturn JSC, Krasnodar

Abstract: The external quantum efficiency spectra for GaInP, Ga(In)As and Si subcells of hybrid GaInP/Ga(In)As//Si solar cells for space applications have been calculated. It has been found that decreasing the thickness of the photoactive layers of the GaInP subcell from 550 nm to 290 nm and the Ga(In)As subcell from 3100 nm to 550 nm allows matching the photogenerated currents at a level of $\sim$ 14.5 mA/cm$^2$, while replacing the Ga(In)As with a 600 nm thick GaAs subcell ensures matching at a level of $\sim$ 14.9 mA/cm$^2$. It has been shown that replacing the middle and bottom subcells in the GaInP/Ga(In)As/Ge structure with GaAs and Si, respectively, will increase the efficiency from 29.4% to 30.8% (AM0, 1 sun) while simultaneously improving the energy-mass parameters and the active exploitation time of space solar batteries.

Keywords: multijunction solar cell, MOCVD, efficiency, spectral characteristics, mathematical modeling.

Received: 25.02.2025
Revised: 02.04.2025
Accepted: 07.04.2025

DOI: 10.61011/PJTF.2025.13.60703.20295

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