The analytical description of the refractive index temperature coefficient in III–V semiconductors within the normal dispersion theory approach

I. I. Vrubel'^a, E. D. Cherotchenko^a, D. A. Mikhailov^a, R. G. Polozkov^b, V. V. Dyudelev^a, G. S. Sokolovskii<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: In the framework of the normal dispersion theory we obtain the energy dependence of the refractive index temperature coefficient in the transparency window of the III–V family typical compounds. Additionally, we show that the main results are also applicable to compounds of other classes: monomolecular compounds of group IV, as well as zinc-based chalcogenide semiconductors. It is shown that the growth of the refractive index is caused by a simultaneous decrease in the probability of interband transitions and the width of the band gap of these semiconductors upon heating. The fundamental relationship of the obtained results with the Varshni formula is considered. The applicability of the obtained results to the problem of dual-comb spectrometry is discussed.

Keywords: QCL, refractive index, dual-comb spectroscopy.

Received: 11.12.2024
Revised: 17.03.2025
Accepted: 19.03.2025

DOI: 10.61011/PJTF.2025.12.60607.20222

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