A. A. Lebedev, S. Yu. Davydov, L. M. Sorokin, L. V. Shakhov, “Fabrication of quasi-superlattices at the interface between 3<i>C</i>-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 23,Pages <nobr>89

This article is cited in 5 papers

Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum

A. A. Lebedev^ab, S. Yu. Davydov^ab, L. M. Sorokin^a, L. V. Shakhov^a

^a Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: Transmission electron microscopy has been used to study the structure of a transition layer between a hexagonal substrate (6H-SiC and 4H-SiC) and a cubic silicon carbide layer grown by sublimation epitaxy in vacuum. It is shown by microdiffraction analysis that the transition layer with a thickness of 210 nm is constituted by alternating layers of cubic (3C) and hexagonal (6H) silicon carbide. It is demonstrated that 6H-SiC/3C-SiC and 4H-SiC/3C-SiC quasi-superlattices can be produced by this method.

Received: 30.07.2015