E. A. Baranov, A. O. Zamchiy, S. Ya. Khmel', “Synthesis of $a$-SiO$_x$:H thin films by the gas-jet electron beam plasma chemical vapor deposition method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 20,Pages 89

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Synthesis of $a$-SiO$_x$:H thin films by the gas-jet electron beam plasma chemical vapor deposition method

E. A. Baranov^a, A. O. Zamchiy^ab, S. Ya. Khmel'^a

^a S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences
^b Novosibirsk State University

Abstract: Thin $a$-SiO$_x$:H films have been synthesized for the first time by the gas-jet electron beam plasma chemical vapor deposition method. As the substrate temperature increased from room temperature to 415$^\circ$C, the thin film growth rate decreased from 2 to 1.15 nm/s, the hydrogen concentration in the thin films decreased from 12.5 to 4.2%, and the oxygen concentration increased from 14.5 to 20.8%. A decrease in the hydrogen content is related to enhanced effusion and thermal desorption. The Raman spectra of Si–Si bonds in the films are typical of materials with amorphous structure.

Received: 21.05.2015