Single-crystal GaN/AlN layers on CVD diamond

O. I. Khrykin^a, Yu. N. Drozdov^a, M. N. Drozdov^a, P. A. Yunin^ab, V. I. Shashkin^a, S. A. Bogdanov^c, A. B. Muchnikov^c, A. L. Vikharev^c, D. B. Radishev<sup>c

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod
^c Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

Abstract: Original approach to fabricating a GaN/AlN/nanocrystalline diamond structure has been suggested and implemented. The stages of deposition of a structure of this kind include the following: (a) growth of nanocrystalline CVD-diamond on single-crystal AlN (preliminarily grown on a silicon substrate), (b) etch removal of the silicon substrate, and (c) growth of single-crystal GaN on the surface of single-crystal AlN. Single-crystal gallium nitride with a width of the X-ray rocking curve for the (0002) reflection of 0.35$^\circ$ was obtained on a nanocrystalline-diamond substrate.

Received: 05.05.2015

 English version: Technical Physics Letters, 2015, 41:10, 954–956

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