Modeling the deflection of relativistic electrons in a bent silicon crystal

V. P. Koshcheev^a, Yu. N. Shtanov^b, D. A. Morgun^c, T. A. Panina<sup>c

a</sup> Strela Branch of MAI, Zhukovsky, Moscow Region
^b Surgut Institute of Oil and Gas, Tyumen State Oil and Gas University
^c Surgut State University

Abstract: The deflection of electrons with energies 855 MeV and 6.3 GeV in planar (111) channels of a bent silicon crystal has been numerically simulated using a TROPICS computer code with atomic diffusion coefficient constructed in the Doyle–Turner approximation of the isolated atom potential. It is established that the atomic diffusion coefficient tends to a minimum value in the region of maximum nuclear density of atomic chain, where the Kitagawa–Ohtsuki diffusion coefficient reaches a maximum value.

Received: 05.05.2015

 English version: Technical Physics Letters, 2015, 41:10, 946–949

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